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  DSI45-08A a s a s standard rectifier symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 480 i a v f 1.28 r 0.55 k/w v r = 1 3 min. 45 t = 10 ms applications: v rrm v 800 20 t vj vc = t vj c =ma 3 package: part number v r = t vj =c i f =a v t c = 130c d = p tot 270 w t c c = t vj 175 c -40 v i rrm = = 800 45 45 t vj =45c DSI45-08A v a 800 v 800 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.37 t vj c =25 c j 18 j unction capacitance v= v; 400 t 150 v f0 v 0.81 t vj = 175c r f 9.1 f = 1 mhz = c 25 m v 1.23 t vj =c i f =a v 45 1.35 i f =a 90 i f =a 90 threshold voltage slope resistance for power loss calculation only backside: cat hode 518 a t vj = 150c i t t=45c value for fusing t = 150c 2 a 408 441 a v r = 0 v v r = 0 v v= 0 v v= 0 v (50 hz), sine t = 8,3 ms (60 hz), sine t = 10 ms (50 hz), sine t = 8,3 ms (60 hz), sine t = 10 ms (50 hz), sine t = 8,3 ms (60 hz), sine t = 10 ms (50 hz), sine t = 8,3 ms (60 hz), sine v f = 1.23 v housing: single diode to-247 r industry standard outlin e r epoxy meets ul 94v-0 r rohs compliant vj r vj r r vj a pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations fav average forward current fav 150 1152 1120 832 808 2 2 2 a s a s 2 ixys reserves the right to c hange limits, conditions and dimensions. 20090529a data according to iec 60747and per diode unless otherwise specified ? 2009 ixys all rights reserved
DSI45-08A i rms a per pin 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isolated ba ckside, the whole current c apability can be used by connecting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name DSI45-08A 471887 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking dsi45-12a dsi45-16a dsi45-16ar to-247ad (2) to-247ad (2) isoplus247 (2) similar part package 1) 1 ) marking on product DSI45-08A 1200 1600 1600 voltage class rms ixys reserves the right to c hange limits, conditions and dimensions. 20090529a data according to iec 60747and per diode unless otherwise specified ? 2009 ixys all rights reserved
DSI45-08A c e f d b a k g h j l n m dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 outlines to-247 ixys reserves the right to c hange limits, conditions and dimensions. 20090529a data according to iec 60747and per diode unless otherwise specified ? 2009 ixys all rights reserved
DSI45-08A 0.001 0.01 0.1 1 0 100 200 300 400 500 23456789 110 10 2 10 3 10 4 0.00.40.81.21.6 0 10 20 30 40 50 60 70 0 10203040 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 dsi45 i f [a] v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature, sine 180 fig. 5 max. forward current versus case temperature, sine180 fig. 6 transient thermal impedance junction to case t [s] constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.1633 0.016 2 0.2517 0.118 3 0.0933 0.588 4 0.04167 2.6 ixys reserves the right to c hange limits, conditions and dimensions. 20090529a data according to iec 60747and per diode unless otherwise specified ? 2009 ixys all rights reserved


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